Growth of strained GaAs 1 y Sb y and GaAs 1 y z Sb y N z quantum wells on InP substrates
نویسندگان
چکیده
The metal organic vapor-phase epitaxy (MOVPE) growth conditions and properties of fully strained GaAs1 y zSbyNz/InP multiquantum wells (MQWs) are investigated. Higher Sb incorporation within the strained GaAs1 ySby layers was observed when using a higher Sb/(As+Sb) precursor ratio and higher growth temperature. However, lattice-latching effects and the strain values ultimately limit the maximum amount of Sb incorporated. In GaAs1 y zSbyNz layers, a decrease of AsH3 precursor flux leads to an increase of N and Sb incorporation, whereas an increase of unsymmetrical dimethylhydrazine (U-DMHy) precursor flux leads to an increase of N and a decrease of Sb incorporation. The photoluminescence emission from the GaAs1 y zSbyNz QW is observed to red-shift with decreasing AsH3 and increasing U-DMHy flux. Sb accumulation at the InP to GaAs1 y zSbyNz interface is also observed from secondary ion mass spectroscopy analysis, indicating further optimization of switching sequences is required to improve the compositional uniformity of the QW. r 2007 Elsevier B.V. All rights reserved. PACS: 78.67.De; 78.55.Cr; 81.15.Gh
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